Nimewo Pati :
CAS325M12HM2
Manifakti :
Cree/Wolfspeed
Deskripsyon :
MOSFET 2N-CH 1200V 444A MODULE
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
444A (Tc)
RD sou (Max) @ Id, Vgs :
4.3 mOhm @ 400A, 20V
Vgs (th) (Max) @ Id :
4V @ 105mA
Chaje Gate (Qg) (Max) @ Vgs :
1127nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Operating Tanperati :
175°C (TJ)
Pake Aparèy Founisè :
Module