Vishay Semiconductor Diodes Division - UHB10FT-E3/8W

KEY Part #: K6456443

UHB10FT-E3/8W Pricing (USD) [116617PC Stock]

  • 1 pcs$0.31717
  • 800 pcs$0.29706

Nimewo Pati:
UHB10FT-E3/8W
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 300V 10A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Objektif espesyal, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UHB10FT-E3/8W electronic components. UHB10FT-E3/8W can be shipped within 24 hours after order. If you have any demands for UHB10FT-E3/8W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UHB10FT-E3/8W Atribi pwodwi yo

Nimewo Pati : UHB10FT-E3/8W
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 300V 10A D2PAK
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 300V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 5µA @ 300V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D2PAK
Operating Tanperati - Junction : -55°C ~ 175°C

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