IXTQ110N10P Pricing (USD) [21206PC Stock]
- 1 pcs$2.14852
- 30 pcs$2.13784
- Nimewo Pati:
- IXTQ110N10P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 110A TO-3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTQ110N10P electronic components. IXTQ110N10P can be shipped within 24 hours after order. If you have any demands for IXTQ110N10P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTQ110N10P Atribi pwodwi yo
Nimewo Pati :
IXTQ110N10P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 110A TO-3P
Seri :
PolarHT™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
15 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3550pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
480W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P
Pake / Ka :
TO-3P-3, SC-65-3
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