IPD65R650CEATMA1 Pricing (USD) [2905PC Stock]
- 2,500 pcs$0.14383
- Nimewo Pati:
- IPD65R650CEATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 650V 10.1A TO252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPD65R650CEATMA1 electronic components. IPD65R650CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R650CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R650CEATMA1 Atribi pwodwi yo
Nimewo Pati :
IPD65R650CEATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V 10.1A TO252
Seri :
CoolMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
650 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 0.21mA
Chaje Gate (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
440pF @ 100V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
86W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO252-3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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