SQ4961EY-T1_GE3 Pricing (USD) [118801PC Stock]
- 1 pcs$0.31134
- 2,500 pcs$0.26312
- Nimewo Pati:
- SQ4961EY-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET DUAL P-CHAN 60V SO8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - JFETs, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQ4961EY-T1_GE3 electronic components. SQ4961EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4961EY-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ4961EY-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQ4961EY-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET DUAL P-CHAN 60V SO8
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.4A (Tc)
RD sou (Max) @ Id, Vgs :
85 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
40nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1140pF @ 25V
Pouvwa - Max :
3.3W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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