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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NDF11N50ZG

ON Semiconductor - NDF11N50ZG

KEY Part #: K6406490

NDF11N50ZG Pricing (USD) [1302PC Stock]

  • 850 pcs$0.26576
Nimewo Pati:
NDF11N50ZG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 500V 12A TO-220FP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - Objektif espesyal and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NDF11N50ZG electronic components. NDF11N50ZG can be shipped within 24 hours after order. If you have any demands for NDF11N50ZG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NDF11N50ZG Atribi pwodwi yo

Nimewo Pati : NDF11N50ZG
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 500V 12A TO-220FP
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 520 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 69nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1645pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 39W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220FP
Pake / Ka : TO-220-3 Full Pack

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