STMicroelectronics - STGW80H65FB-4

KEY Part #: K6422351

STGW80H65FB-4 Pricing (USD) [9928PC Stock]

  • 1 pcs$4.15084
  • 600 pcs$3.69031

Nimewo Pati:
STGW80H65FB-4
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT BIPO 650V 80A TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGW80H65FB-4 electronic components. STGW80H65FB-4 can be shipped within 24 hours after order. If you have any demands for STGW80H65FB-4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGW80H65FB-4 Atribi pwodwi yo

Nimewo Pati : STGW80H65FB-4
Manifakti : STMicroelectronics
Deskripsyon : IGBT BIPO 650V 80A TO247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 120A
Kouran - Pèseptè batman (Icm) : 240A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 80A
Pouvwa - Max : 469W
Oblije chanje enèji : 2.1mJ (on), 1.5mJ (off)
Kalite Antre : Standard
Gate chaje : 414nC
Td (on / off) @ 25 ° C : 84ns/280ns
Kondisyon egzamen an : 400V, 80A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-4
Pake Aparèy Founisè : TO-247-4L