RDD022N60TL Pricing (USD) [189774PC Stock]
- 1 pcs$0.21546
- 2,500 pcs$0.21439
- Nimewo Pati:
- RDD022N60TL
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 600V CPT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Tiristors - SCR, Transistors - Pwogramasyon Unijunction and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RDD022N60TL electronic components. RDD022N60TL can be shipped within 24 hours after order. If you have any demands for RDD022N60TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RDD022N60TL Atribi pwodwi yo
Nimewo Pati :
RDD022N60TL
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 600V CPT
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.7 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
4.7V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
175pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
20W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
CPT3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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