Diodes Incorporated - DGTD65T15H2TF

KEY Part #: K6423133

DGTD65T15H2TF Pricing (USD) [39626PC Stock]

  • 1 pcs$0.98672

Nimewo Pati:
DGTD65T15H2TF
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
IGBT600V-XITO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Diodes - RF and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DGTD65T15H2TF electronic components. DGTD65T15H2TF can be shipped within 24 hours after order. If you have any demands for DGTD65T15H2TF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DGTD65T15H2TF Atribi pwodwi yo

Nimewo Pati : DGTD65T15H2TF
Manifakti : Diodes Incorporated
Deskripsyon : IGBT600V-XITO-220AB
Seri : -
Estati Pati : Active
Kalite IGBT : Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 30A
Kouran - Pèseptè batman (Icm) : 60A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 15A
Pouvwa - Max : 48W
Oblije chanje enèji : 270µJ (on), 86µJ (off)
Kalite Antre : Standard
Gate chaje : 61nC
Td (on / off) @ 25 ° C : 19ns/128ns
Kondisyon egzamen an : 400V, 15A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 150ns
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3 Full Pack, Isolated Tab
Pake Aparèy Founisè : ITO-220AB