PHK04P02T,518 Pricing (USD) [1476PC Stock]
- 2,500 pcs$0.10409
- Nimewo Pati:
- PHK04P02T,518
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET P-CH 16V 4.66A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PHK04P02T,518 electronic components. PHK04P02T,518 can be shipped within 24 hours after order. If you have any demands for PHK04P02T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHK04P02T,518 Atribi pwodwi yo
Nimewo Pati :
PHK04P02T,518
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET P-CH 16V 4.66A 8-SOIC
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
16V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.66A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 10V
RD sou (Max) @ Id, Vgs :
120 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
600mV @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
7.2nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
528pF @ 12.8V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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