Nimewo Pati :
SI6466ADQ-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 20V 6.8A 8TSSOP
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
14 mOhm @ 8.1A, 4.5V
Vgs (th) (Max) @ Id :
450mV @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
27nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Disipasyon Pouvwa (Max) :
1.05W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSSOP
Pake / Ka :
8-TSSOP (0.173", 4.40mm Width)