Vishay Siliconix - SI6466ADQ-T1-GE3

KEY Part #: K6406047

[1455PC Stock]


    Nimewo Pati:
    SI6466ADQ-T1-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 20V 6.8A 8TSSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI6466ADQ-T1-GE3 electronic components. SI6466ADQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6466ADQ-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI6466ADQ-T1-GE3 Atribi pwodwi yo

    Nimewo Pati : SI6466ADQ-T1-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 20V 6.8A 8TSSOP
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.8A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 14 mOhm @ 8.1A, 4.5V
    Vgs (th) (Max) @ Id : 450mV @ 250µA (Min)
    Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 5V
    Vgs (Max) : ±8V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.05W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-TSSOP
    Pake / Ka : 8-TSSOP (0.173", 4.40mm Width)