Nimewo Pati :
SIR788DP-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 30V 60A PPAK SO-8
Seri :
SkyFET®, TrenchFET®
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3.4 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
75nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2873pF @ 15V
Karakteristik FET :
Schottky Diode (Body)
Disipasyon Pouvwa (Max) :
5W (Ta), 48W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8
Pake / Ka :
PowerPAK® SO-8