[13365PC Stock]
- Nimewo Pati:
- IRFR825PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 500V 6A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFR825PBF electronic components. IRFR825PBF can be shipped within 24 hours after order. If you have any demands for IRFR825PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR825PBF Atribi pwodwi yo
Nimewo Pati :
IRFR825PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 500V 6A DPAK
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.3 Ohm @ 3.7A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1346pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
119W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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