Infineon Technologies - FF150R12YT3BOMA1

KEY Part #: K6534619

FF150R12YT3BOMA1 Pricing (USD) [1887PC Stock]

  • 1 pcs$22.95837

Nimewo Pati:
FF150R12YT3BOMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE VCES 1200V 150A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Infineon Technologies FF150R12YT3BOMA1 electronic components. FF150R12YT3BOMA1 can be shipped within 24 hours after order. If you have any demands for FF150R12YT3BOMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF150R12YT3BOMA1 Atribi pwodwi yo

Nimewo Pati : FF150R12YT3BOMA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE VCES 1200V 150A
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Nou konte genyen : 2 Independent
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 200A
Pouvwa - Max : 625W
Vce (sou) (Max) @ Vge, Ic : 2.15V @ 15V, 150A
Kouran - Cutoff Pèseptè (Max) : 1mA
Antre kapasite (Cies) @ Vce : 10.5nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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