Nimewo Pati :
SQJ422EP-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 40V 75A PPAK SO-8
Seri :
Automotive, AEC-Q101, TrenchFET®
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
74A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3.4 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
100nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
4660pF @ 20V
Disipasyon Pouvwa (Max) :
83W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8
Pake / Ka :
PowerPAK® SO-8