[4176PC Stock]
- Nimewo Pati:
- PMGD130UN,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 1.2A 6TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMGD130UN,115 electronic components. PMGD130UN,115 can be shipped within 24 hours after order. If you have any demands for PMGD130UN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMGD130UN,115 Atribi pwodwi yo
Nimewo Pati :
PMGD130UN,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET 2N-CH 20V 1.2A 6TSSOP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.2A
RD sou (Max) @ Id, Vgs :
145 mOhm @ 1.2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.3nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
83pF @ 10V
Pouvwa - Max :
390mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
6-TSSOP
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