IXTN120N25 Pricing (USD) [3500PC Stock]
- 1 pcs$13.06054
- 10 pcs$12.99556
- Nimewo Pati:
- IXTN120N25
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 250V 120A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXTN120N25 electronic components. IXTN120N25 can be shipped within 24 hours after order. If you have any demands for IXTN120N25, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN120N25 Atribi pwodwi yo
Nimewo Pati :
IXTN120N25
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 250V 120A SOT-227
Seri :
MegaMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
20 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
360nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
7700pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
730W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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