Infineon Technologies - IPI045N10N3GXKSA1

KEY Part #: K6398204

IPI045N10N3GXKSA1 Pricing (USD) [26270PC Stock]

  • 1 pcs$1.56889

Nimewo Pati:
IPI045N10N3GXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 100A TO262-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - IGBTs - Modil yo and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI045N10N3GXKSA1 Atribi pwodwi yo

Nimewo Pati : IPI045N10N3GXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 100A TO262-3
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs : 117nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 8410pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 214W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA