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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDMB3900AN

ON Semiconductor - FDMB3900AN

KEY Part #: K6521955

FDMB3900AN Pricing (USD) [344906PC Stock]

  • 1 pcs$0.10778
  • 3,000 pcs$0.10724
Nimewo Pati:
FDMB3900AN
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 25V 7A 8-MLP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - Zener - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMB3900AN electronic components. FDMB3900AN can be shipped within 24 hours after order. If you have any demands for FDMB3900AN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMB3900AN Atribi pwodwi yo

Nimewo Pati : FDMB3900AN
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 25V 7A 8-MLP
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A
RD sou (Max) @ Id, Vgs : 23 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 890pF @ 13V
Pouvwa - Max : 800mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerWDFN
Pake Aparèy Founisè : 8-MLP, MicroFET (3x1.9)

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