GeneSiC Semiconductor - GA05JT12-247

KEY Part #: K6412607

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Nimewo Pati : GA05JT12-247

Manifakti : GeneSiC Semiconductor

Deskripsyon : TRANS SJT 1200V 5A

Seri : -

Estati Pati : Obsolete

FET Kalite : -

Teknoloji : SiC (Silicon Carbide Junction Transistor)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 280 mOhm @ 5A

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 106W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247AB

Pake / Ka : TO-247-3

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