Infineon Technologies - IGB15N60TATMA1

KEY Part #: K6422470

IGB15N60TATMA1 Pricing (USD) [86735PC Stock]

  • 1 pcs$0.45081
  • 1,000 pcs$0.43082

Nimewo Pati:
IGB15N60TATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 30A 130W TO263-3-2.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - RF and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Infineon Technologies IGB15N60TATMA1 electronic components. IGB15N60TATMA1 can be shipped within 24 hours after order. If you have any demands for IGB15N60TATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGB15N60TATMA1 Atribi pwodwi yo

Nimewo Pati : IGB15N60TATMA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 30A 130W TO263-3-2
Seri : TrenchStop®
Estati Pati : Active
Kalite IGBT : Trench
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 30A
Kouran - Pèseptè batman (Icm) : 45A
Vce (sou) (Max) @ Vge, Ic : 2.05V @ 15V, 15A
Pouvwa - Max : 130W
Oblije chanje enèji : 570µJ
Kalite Antre : Standard
Gate chaje : 87nC
Td (on / off) @ 25 ° C : 17ns/188ns
Kondisyon egzamen an : 400V, 15A, 15 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : PG-TO263-3-2