Nimewo Pati :
APTGT75DA120D1G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 1200V 110A 357W D1
Estati Pati :
Discontinued at Digi-Key
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Single
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
110A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) :
4mA
Antre kapasite (Cies) @ Vce :
5345nF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount