STMicroelectronics - STI6N80K5

KEY Part #: K6396733

STI6N80K5 Pricing (USD) [72767PC Stock]

  • 1 pcs$0.53734
  • 1,000 pcs$0.48015

Nimewo Pati:
STI6N80K5
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 800V 4.5A I2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STI6N80K5 Atribi pwodwi yo

Nimewo Pati : STI6N80K5
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 800V 4.5A I2PAK
Seri : SuperMESH5™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.6 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id : 5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 7.5nC @ 10V
Vgs (Max) : 30V
Antre kapasite (Ciss) (Max) @ Vds : 255pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 85W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I2PAK (TO-262)
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA