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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDD86540

ON Semiconductor - FDD86540

KEY Part #: K6396653

FDD86540 Pricing (USD) [113824PC Stock]

  • 1 pcs$0.32495
  • 2,500 pcs$0.28017
Nimewo Pati:
FDD86540
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 60V 50A DPAK-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDD86540 electronic components. FDD86540 can be shipped within 24 hours after order. If you have any demands for FDD86540, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD86540 Atribi pwodwi yo

Nimewo Pati : FDD86540
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 60V 50A DPAK-3
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 8V, 10V
RD sou (Max) @ Id, Vgs : 4.1 mOhm @ 21.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 90nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6340pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.1W (Ta), 127W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-PAK (TO-252)
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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