IXYS - IXYX200N65B3

KEY Part #: K6421988

IXYX200N65B3 Pricing (USD) [7100PC Stock]

  • 1 pcs$5.80402

Nimewo Pati:
IXYX200N65B3
Manifakti:
IXYS
Detaye deskripsyon:
IGBT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - JFETs, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in IXYS IXYX200N65B3 electronic components. IXYX200N65B3 can be shipped within 24 hours after order. If you have any demands for IXYX200N65B3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXYX200N65B3 Atribi pwodwi yo

Nimewo Pati : IXYX200N65B3
Manifakti : IXYS
Deskripsyon : IGBT
Seri : XPT™, GenX3™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 410A
Kouran - Pèseptè batman (Icm) : 1100A
Vce (sou) (Max) @ Vge, Ic : 1.7V @ 15V, 100A
Pouvwa - Max : 1560W
Oblije chanje enèji : 5mJ (on), 4mJ (off)
Kalite Antre : Standard
Gate chaje : 340nC
Td (on / off) @ 25 ° C : 60ns/370ns
Kondisyon egzamen an : 400V, 100A, 0 Ohm, 15V
Ranvèse Tan Reverse (trr) : 108ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PLUS247™-3