Vishay Semiconductor Diodes Division - BYV26B-TAP

KEY Part #: K6455321

BYV26B-TAP Pricing (USD) [477759PC Stock]

  • 1 pcs$0.07742
  • 25,000 pcs$0.07475

Nimewo Pati:
BYV26B-TAP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 400V 1A SOD57. Rectifiers 1.0 Amp 400 Volt 30 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYV26B-TAP electronic components. BYV26B-TAP can be shipped within 24 hours after order. If you have any demands for BYV26B-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYV26B-TAP Atribi pwodwi yo

Nimewo Pati : BYV26B-TAP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 400V 1A SOD57
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 2.5V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 5µA @ 400V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : SOD-57, Axial
Pake Aparèy Founisè : SOD-57
Operating Tanperati - Junction : -55°C ~ 175°C

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