VS-1EFH02HM3/I Pricing (USD) [792956PC Stock]
- 1 pcs$0.04665
- 10,000 pcs$0.04227
- 30,000 pcs$0.03887
- Nimewo Pati:
- VS-1EFH02HM3/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Diodes - RF, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VS-1EFH02HM3/I electronic components. VS-1EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-1EFH02HM3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-1EFH02HM3/I Atribi pwodwi yo
Nimewo Pati :
VS-1EFH02HM3/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 1A DO219AB
Seri :
Automotive, AEC-Q101, FRED Pt®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
930mV @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
2µA @ 200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-219AB
Pake Aparèy Founisè :
DO-219AB (SMF)
Operating Tanperati - Junction :
-55°C ~ 175°C
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VS-1EFH02HM3/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
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VS-2EFH02HM3/I
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