Vishay Semiconductor Diodes Division - VS-1EFH02HM3/I

KEY Part #: K6455314

VS-1EFH02HM3/I Pricing (USD) [792956PC Stock]

  • 1 pcs$0.04665
  • 10,000 pcs$0.04227
  • 30,000 pcs$0.03887

Nimewo Pati:
VS-1EFH02HM3/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-1EFH02HM3/I electronic components. VS-1EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-1EFH02HM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-1EFH02HM3/I Atribi pwodwi yo

Nimewo Pati : VS-1EFH02HM3/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 1A DO219AB
Seri : Automotive, AEC-Q101, FRED Pt®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 930mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 2µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AB
Pake Aparèy Founisè : DO-219AB (SMF)
Operating Tanperati - Junction : -55°C ~ 175°C

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