Vishay Semiconductor Diodes Division - S07G-GS18

KEY Part #: K6455311

S07G-GS18 Pricing (USD) [1138422PC Stock]

  • 1 pcs$0.03429
  • 10,000 pcs$0.03412
  • 30,000 pcs$0.03191
  • 50,000 pcs$0.02935

Nimewo Pati:
S07G-GS18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GP 400V 700MA DO219AB. Rectifiers 0.7 Amp 400 Volt 1.8uS
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S07G-GS18 electronic components. S07G-GS18 can be shipped within 24 hours after order. If you have any demands for S07G-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S07G-GS18 Atribi pwodwi yo

Nimewo Pati : S07G-GS18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GP 400V 700MA DO219AB
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 700mA
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.8µs
Kouran - Fèy Reverse @ Vr : 10µA @ 200V
Kapasite @ Vr, F : 4pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AB
Pake Aparèy Founisè : DO-219AB (SMF)
Operating Tanperati - Junction : -55°C ~ 150°C

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