IXGX82N120B3 Pricing (USD) [5161PC Stock]
- 1 pcs$8.83771
- 30 pcs$8.79374
- Nimewo Pati:
- IXGX82N120B3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1200V 230A 1250W PLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Diodes - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXGX82N120B3 electronic components. IXGX82N120B3 can be shipped within 24 hours after order. If you have any demands for IXGX82N120B3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGX82N120B3 Atribi pwodwi yo
Nimewo Pati :
IXGX82N120B3
Manifakti :
IXYS
Deskripsyon :
IGBT 1200V 230A 1250W PLUS247
Seri :
GenX3™
Estati Pati :
Active
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
230A
Kouran - Pèseptè batman (Icm) :
500A
Vce (sou) (Max) @ Vge, Ic :
3.2V @ 15V, 82A
Pouvwa - Max :
1250W
Oblije chanje enèji :
5mJ (on), 3.3mJ (off)
Kalite Antre :
Standard
Gate chaje :
350nC
Td (on / off) @ 25 ° C :
30ns/210ns
Kondisyon egzamen an :
600V, 80A, 2 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
PLUS247™-3
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