DGTD120T25S1PT Pricing (USD) [16809PC Stock]
- 1 pcs$2.45167
- Nimewo Pati:
- DGTD120T25S1PT
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- IGBT 1200V-X TO247 TUBE 0.45K.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Diodes - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DGTD120T25S1PT electronic components. DGTD120T25S1PT can be shipped within 24 hours after order. If you have any demands for DGTD120T25S1PT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DGTD120T25S1PT Atribi pwodwi yo
Nimewo Pati :
DGTD120T25S1PT
Manifakti :
Diodes Incorporated
Deskripsyon :
IGBT 1200V-X TO247 TUBE 0.45K
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
50A
Kouran - Pèseptè batman (Icm) :
100A
Vce (sou) (Max) @ Vge, Ic :
2.4V @ 15V, 25A
Pouvwa - Max :
348W
Oblije chanje enèji :
1.44mJ (on), 550µJ (off)
Kalite Antre :
Standard
Gate chaje :
204nC
Td (on / off) @ 25 ° C :
73ns/269ns
Kondisyon egzamen an :
600V, 25A, 23 Ohm, 15V
Ranvèse Tan Reverse (trr) :
100ns
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
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