Diodes Incorporated - DGTD120T25S1PT

KEY Part #: K6422413

DGTD120T25S1PT Pricing (USD) [16809PC Stock]

  • 1 pcs$2.45167

Nimewo Pati:
DGTD120T25S1PT
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
IGBT 1200V-X TO247 TUBE 0.45K.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DGTD120T25S1PT electronic components. DGTD120T25S1PT can be shipped within 24 hours after order. If you have any demands for DGTD120T25S1PT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DGTD120T25S1PT Atribi pwodwi yo

Nimewo Pati : DGTD120T25S1PT
Manifakti : Diodes Incorporated
Deskripsyon : IGBT 1200V-X TO247 TUBE 0.45K
Seri : -
Estati Pati : Active
Kalite IGBT : Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 100A
Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 25A
Pouvwa - Max : 348W
Oblije chanje enèji : 1.44mJ (on), 550µJ (off)
Kalite Antre : Standard
Gate chaje : 204nC
Td (on / off) @ 25 ° C : 73ns/269ns
Kondisyon egzamen an : 600V, 25A, 23 Ohm, 15V
Ranvèse Tan Reverse (trr) : 100ns
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247