Samsung Semiconductor - K4A8G085WC-BCPB

KEY Part #: K7359600

[16597PC Stock]


    Nimewo Pati:
    K4A8G085WC-BCPB
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    8 Gb 1G x 8 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: LPDDR4X, DDR3, LPDDR3, HBM Flarebolt, LPDDR5, SLC Nand, GDDR5 and LPDDR4 ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4A8G085WC-BCPB electronic components. K4A8G085WC-BCPB can be shipped within 24 hours after order. If you have any demands for K4A8G085WC-BCPB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G085WC-BCPB Atribi pwodwi yo

    Nimewo Pati : K4A8G085WC-BCPB
    Manifakti : Samsung Semiconductor
    Deskripsyon : 8 Gb 1G x 8 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
    Seri : DDR4
    dansite : 8 Gb
    Org. : 1G x 8
    vitès : 2133 Mbps
    Voltage : 1.2 V
    Tanperatur. : 0 ~ 85 °C
    Pake : 78FBGA
    pwodwi dènye nouvèl : Mass Production

    Ou ka enterese tou
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.