Nimewo Pati :
TPC8126,LQ(CM
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 30V 11A 8SOP
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
10 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
2V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
56nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2400pF @ 10V
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP (5.5x6.0)
Pake / Ka :
8-SOIC (0.173", 4.40mm Width)