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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTMFS4H013NFT3G

ON Semiconductor - NTMFS4H013NFT3G

KEY Part #: K6393265

NTMFS4H013NFT3G Pricing (USD) [81749PC Stock]

  • 1 pcs$1.21604
  • 5,000 pcs$1.20999
Nimewo Pati:
NTMFS4H013NFT3G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 25V 35A SO8FL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTMFS4H013NFT3G electronic components. NTMFS4H013NFT3G can be shipped within 24 hours after order. If you have any demands for NTMFS4H013NFT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS4H013NFT3G Atribi pwodwi yo

Nimewo Pati : NTMFS4H013NFT3G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 25V 35A SO8FL
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 43A (Ta), 269A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 0.9 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3923pF @ 12V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.7W (Ta), 104W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)
Pake / Ka : 8-PowerTDFN

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