Infineon Technologies - IPA70R900P7SXKSA1

KEY Part #: K6398584

IPA70R900P7SXKSA1 Pricing (USD) [97417PC Stock]

  • 1 pcs$0.40138

Nimewo Pati:
IPA70R900P7SXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Diodes - Zener - Single and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPA70R900P7SXKSA1 electronic components. IPA70R900P7SXKSA1 can be shipped within 24 hours after order. If you have any demands for IPA70R900P7SXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA70R900P7SXKSA1 Atribi pwodwi yo

Nimewo Pati : IPA70R900P7SXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH TO220-3
Seri : CoolMOS™ P7
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 900 mOhm @ 1.1A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 60µA
Chaje Gate (Qg) (Max) @ Vgs : 6.8nC @ 400V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 211pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 20.5W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220 Full Pack
Pake / Ka : TO-220-3 Full Pack

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