Nimewo Pati :
RGW00TS65GC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
650V 50A FIELD STOP TRENCH IGBT
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
96A
Kouran - Pèseptè batman (Icm) :
200A
Vce (sou) (Max) @ Vge, Ic :
1.9V @ 15V, 50A
Oblije chanje enèji :
1.18mJ (on), 960µJ (off)
Td (on / off) @ 25 ° C :
52ns/180ns
Kondisyon egzamen an :
400V, 50A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247N