Nimewo Pati :
C3M0280090D
Manifakti :
Cree/Wolfspeed
Deskripsyon :
MOSFET N-CH 900V 11.5A
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
15V
RD sou (Max) @ Id, Vgs :
360 mOhm @ 7.5A, 15V
Vgs (th) (Max) @ Id :
3.5V @ 1.2mA
Chaje Gate (Qg) (Max) @ Vgs :
9.5nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds :
150pF @ 600V
Disipasyon Pouvwa (Max) :
54W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3