Vishay Semiconductor Diodes Division - S2G-E3/1

KEY Part #: K6438115

S2G-E3/1 Pricing (USD) [994802PC Stock]

  • 1 pcs$0.03924
  • 6,000 pcs$0.03904

Nimewo Pati:
S2G-E3/1
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 1.5A DO214AA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Modil pouvwa chofè and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S2G-E3/1 electronic components. S2G-E3/1 can be shipped within 24 hours after order. If you have any demands for S2G-E3/1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S2G-E3/1 Atribi pwodwi yo

Nimewo Pati : S2G-E3/1
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 1.5A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 1.5A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 1µA @ 400V
Kapasite @ Vr, F : 16pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 150°C

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