DMN4800LSS-13 Pricing (USD) [516749PC Stock]
- 1 pcs$0.07158
- 2,500 pcs$0.06406
- Nimewo Pati:
- DMN4800LSS-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 30V 9A 8SOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN4800LSS-13 electronic components. DMN4800LSS-13 can be shipped within 24 hours after order. If you have any demands for DMN4800LSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN4800LSS-13 Atribi pwodwi yo
Nimewo Pati :
DMN4800LSS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 30V 9A 8SOP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
16 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
1.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.47nC @ 5V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
798pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.46W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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