BSO080P03NS3EGXUMA1 Pricing (USD) [220828PC Stock]
- 1 pcs$0.16749
- 2,500 pcs$0.15670
- Nimewo Pati:
- BSO080P03NS3EGXUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 30V 12A 8DSO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSO080P03NS3EGXUMA1 electronic components. BSO080P03NS3EGXUMA1 can be shipped within 24 hours after order. If you have any demands for BSO080P03NS3EGXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO080P03NS3EGXUMA1 Atribi pwodwi yo
Nimewo Pati :
BSO080P03NS3EGXUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 30V 12A 8DSO
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
8 mOhm @ 14.8A, 10V
Vgs (th) (Max) @ Id :
3.1V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
81nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
6750pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-DSO-8
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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