[9414PC Stock]
- Nimewo Pati:
- IRG4PF50WD-201P
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 900V 51A 200W TO247AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRG4PF50WD-201P electronic components. IRG4PF50WD-201P can be shipped within 24 hours after order. If you have any demands for IRG4PF50WD-201P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRG4PF50WD-201P Atribi pwodwi yo
Nimewo Pati :
IRG4PF50WD-201P
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 900V 51A 200W TO247AC
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
900V
Kouran - Pèseptè (Ic) (Max) :
51A
Kouran - Pèseptè batman (Icm) :
204A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 28A
Pouvwa - Max :
200W
Oblije chanje enèji :
2.63mJ (on), 1.34mJ (off)
Kalite Antre :
Standard
Gate chaje :
160nC
Td (on / off) @ 25 ° C :
50ns/110ns
Kondisyon egzamen an :
720V, 28A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
90ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247AC
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