Vishay Semiconductor Diodes Division - ES2B-M3/5BT

KEY Part #: K6457753

ES2B-M3/5BT Pricing (USD) [665869PC Stock]

  • 1 pcs$0.05555
  • 12,800 pcs$0.05034

Nimewo Pati:
ES2B-M3/5BT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2A,100V,20NS,UF Rect,SMD
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division ES2B-M3/5BT electronic components. ES2B-M3/5BT can be shipped within 24 hours after order. If you have any demands for ES2B-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2B-M3/5BT Atribi pwodwi yo

Nimewo Pati : ES2B-M3/5BT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 2A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 900mV @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 10µA @ 100V
Kapasite @ Vr, F : 18pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 150°C

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