Vishay Semiconductor Diodes Division - RGP30B-E3/54

KEY Part #: K6440284

RGP30B-E3/54 Pricing (USD) [322487PC Stock]

  • 1 pcs$0.12103
  • 2,800 pcs$0.12043

Nimewo Pati:
RGP30B-E3/54
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 3A DO201AD. Rectifiers 100 Volt 3.0A 150ns 125 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division RGP30B-E3/54 electronic components. RGP30B-E3/54 can be shipped within 24 hours after order. If you have any demands for RGP30B-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP30B-E3/54 Atribi pwodwi yo

Nimewo Pati : RGP30B-E3/54
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 3A DO201AD
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 150ns
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : DO-201AD, Axial
Pake Aparèy Founisè : DO-201AD
Operating Tanperati - Junction : -65°C ~ 175°C

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