[499PC Stock]
- Nimewo Pati:
- IXTC160N10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 83A ISOPLUS220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - Objektif espesyal, Modil pouvwa chofè and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTC160N10T electronic components. IXTC160N10T can be shipped within 24 hours after order. If you have any demands for IXTC160N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTC160N10T Atribi pwodwi yo
Nimewo Pati :
IXTC160N10T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 83A ISOPLUS220
Seri :
TrenchMV™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
83A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
132nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
140W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS220™
Pake / Ka :
ISOPLUS220™
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