Nimewo Pati :
HUFA76413DK8T-F085
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2N-CH 60V 5.1A 8-SO
Seri :
Automotive, AEC-Q101, UltraFET™
Estati Pati :
Not For New Designs
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.1A
RD sou (Max) @ Id, Vgs :
49 mOhm @ 5.1A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
23nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
620pF @ 25V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC