STMicroelectronics - STGY80H65DFB

KEY Part #: K6422817

STGY80H65DFB Pricing (USD) [6017PC Stock]

  • 1 pcs$6.30642
  • 10 pcs$5.79609
  • 100 pcs$4.89512
  • 500 pcs$4.35457

Nimewo Pati:
STGY80H65DFB
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 650V 120A 469W MAX247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Single, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGY80H65DFB electronic components. STGY80H65DFB can be shipped within 24 hours after order. If you have any demands for STGY80H65DFB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGY80H65DFB Atribi pwodwi yo

Nimewo Pati : STGY80H65DFB
Manifakti : STMicroelectronics
Deskripsyon : IGBT 650V 120A 469W MAX247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 120A
Kouran - Pèseptè batman (Icm) : 240A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 80A
Pouvwa - Max : 469W
Oblije chanje enèji : 2.1mJ (on), 1.5mJ (off)
Kalite Antre : Standard
Gate chaje : 414nC
Td (on / off) @ 25 ° C : 84ns/280ns
Kondisyon egzamen an : 400V, 80A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 85ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : MAX247™