IRG4PH50S-EPBF Pricing (USD) [9438PC Stock]
- 1 pcs$2.82929
- 10 pcs$2.54284
- 100 pcs$2.08350
- 500 pcs$1.77363
- 1,000 pcs$1.49584
- Nimewo Pati:
- IRG4PH50S-EPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1200V 57A 200W TO247AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRG4PH50S-EPBF electronic components. IRG4PH50S-EPBF can be shipped within 24 hours after order. If you have any demands for IRG4PH50S-EPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRG4PH50S-EPBF Atribi pwodwi yo
Nimewo Pati :
IRG4PH50S-EPBF
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V 57A 200W TO247AD
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
57A
Kouran - Pèseptè batman (Icm) :
114A
Vce (sou) (Max) @ Vge, Ic :
1.7V @ 15V, 33A
Pouvwa - Max :
200W
Oblije chanje enèji :
1.8mJ (on), 19.6mJ (off)
Kalite Antre :
Standard
Gate chaje :
167nC
Td (on / off) @ 25 ° C :
32ns/845ns
Kondisyon egzamen an :
960V, 33A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247AD
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