BAV19W-HE3-18 Pricing (USD) [2489257PC Stock]
- 1 pcs$0.01568
- 10,000 pcs$0.01560
- Nimewo Pati:
- BAV19W-HE3-18
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 250MA SOD123. Diodes - General Purpose, Power, Switching 120V 625mA 1A IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - TRIACs, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BAV19W-HE3-18 electronic components. BAV19W-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV19W-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAV19W-HE3-18 Atribi pwodwi yo
Nimewo Pati :
BAV19W-HE3-18
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 250MA SOD123
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
250mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 200mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
100nA @ 100V
Kapasite @ Vr, F :
1.5pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SOD-123
Pake Aparèy Founisè :
SOD-123
Operating Tanperati - Junction :
150°C (Max)
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