IXFA3N80 Pricing (USD) [15784PC Stock]
- 1 pcs$2.88640
- 50 pcs$2.87204
- Nimewo Pati:
- IXFA3N80
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 800V 3.6A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFA3N80 electronic components. IXFA3N80 can be shipped within 24 hours after order. If you have any demands for IXFA3N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA3N80 Atribi pwodwi yo
Nimewo Pati :
IXFA3N80
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 800V 3.6A TO-263
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.6 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
685pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXFA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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