IXYS - IXYT30N65C3H1HV

KEY Part #: K6424703

IXYT30N65C3H1HV Pricing (USD) [15351PC Stock]

  • 1 pcs$2.82646
  • 30 pcs$2.81240

Nimewo Pati:
IXYT30N65C3H1HV
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 650V 60A 270W TO268HV.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in IXYS IXYT30N65C3H1HV electronic components. IXYT30N65C3H1HV can be shipped within 24 hours after order. If you have any demands for IXYT30N65C3H1HV, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXYT30N65C3H1HV Atribi pwodwi yo

Nimewo Pati : IXYT30N65C3H1HV
Manifakti : IXYS
Deskripsyon : IGBT 650V 60A 270W TO268HV
Seri : GenX3™, XPT™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 60A
Kouran - Pèseptè batman (Icm) : 118A
Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 30A
Pouvwa - Max : 270W
Oblije chanje enèji : 1mJ (on), 270µJ (off)
Kalite Antre : Standard
Gate chaje : 44nC
Td (on / off) @ 25 ° C : 21ns/75ns
Kondisyon egzamen an : 400V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 120ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè : TO-268