Infineon Technologies - IRGIB10B60KD1P

KEY Part #: K6424801

IRGIB10B60KD1P Pricing (USD) [28512PC Stock]

  • 1 pcs$1.24718
  • 10 pcs$1.06197
  • 100 pcs$0.87028
  • 500 pcs$0.74085
  • 1,000 pcs$0.62481

Nimewo Pati:
IRGIB10B60KD1P
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 16A 44W TO220FP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRGIB10B60KD1P Atribi pwodwi yo

Nimewo Pati : IRGIB10B60KD1P
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 16A 44W TO220FP
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 16A
Kouran - Pèseptè batman (Icm) : 32A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 10A
Pouvwa - Max : 44W
Oblije chanje enèji : 156µJ (on), 165µJ (off)
Kalite Antre : Standard
Gate chaje : 41nC
Td (on / off) @ 25 ° C : 25ns/180ns
Kondisyon egzamen an : 400V, 10A, 50 Ohm, 15V
Ranvèse Tan Reverse (trr) : 79ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3 Full Pack
Pake Aparèy Founisè : TO-220AB Full-Pak